Radiation Effects in InP JFETs
نویسندگان
چکیده
منابع مشابه
Radiation efficiency of heavily doped bulk n-InP semiconductor
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss–Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination b...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1985
ISSN: 0018-9499
DOI: 10.1109/tns.1985.4334058